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AMD Mobile Serial VID Dual-Phase
Fixed-Frequency Controller
ELECTRICAL CHARACTERISTICS (continued)
(Circuit of Figure 2, V IN = 12V, V CC = V DD1 = V DD2 = SHDN = PGD_IN = 5V, V DDIO = 1.8V, PRO = OPTION = GNDS_NB = GNDS_ =
GND_, FBDC_ = FBAC_ = CSP_ = CSN_ = 1.2V, all DAC codes set to the 1.2V code, T A = 0°C to +85°C , unless otherwise noted.
Typical values are at T A = +25°C.)
PARAMETER
Output Undervoltage Fault-
Propagation Delay
SYMBOL
t UVP
CONDITIONS
FBDC_ forced 25mV below trip threshold
MIN
TYP
10
MAX
UNITS
μs
Measured at
PWRGD Threshold
FBDC_ with
respect to
unloaded output
Lower threshold, falling
edge (undervoltage)
-350
-300
-250
V
voltage
15mV hysteresis
(typ)
Upper threshold, rising
edge (overvoltage)
+150
+200
+250
PWRGD Propagation Delay
PWRGD Output Low Voltage
t PWRGD _
FBDC_ forced 25mV outside the PWRGD
trip thresholds
I SINK = 4mA
10
0.4
μs
V
PWRGD Leakage Current
PWRGD Startup Delay and
Transition Blanking Time
I PWRGD _
t BLANK
High state, PWRGD forced to 5.5V
Measured from the time when FBDC_
reaches the target voltage based on the
slew rate set by R TIME
20
1
μA
μs
VRHOT Trip Threshold
VRHOT Delay
t VRHOT
Measured at THRM, with respect to V CC ,
falling edge, 115mV hysteresis (typ)
THRM forced 25mV below the VRHOT trip
threshold, falling edge
29.5
30
10
30.5
%
μ S
VRHOT Output Low Voltage
VRHOT Leakage Current
THRM Input Leakage
I SINK = 4mA
High state, VRHOT forced to 5V
-100
0.4
1
+100
V
μA
nA
Thermal-Shutdown Threshold
T SHDN
Hysteresis = 15°C
160
°C
GATE DRIVERS
DH_ Gate-Driver On-Resistance
DL_ Gate-Driver On-Resistance
DH_ Gate-Driver Source/Sink
Current
DL_ Gate-Driver Source Current
R ON(DH _ )
R ON(DL _ )
I DH _
I DL _
(SOURCE)
BST_ - LX_ forced High state (pullup)
to 5V Low state (pulldown)
DL_, high state
DL_, low state
DH_ forced to 2.5V, BST_ - LX_ forced to 5V
DL_ forced to 2.5V
0.9
0.7
0.7
0.25
2.2
2.7
2.0
2.0
2.0
0.6
Ω
Ω
A
A
DL_ Gate-Driver Sink Current
I DL _ (SINK) DL_ forced to 2.5V
8
A
Dead Time
Internal Boost Diode Switch R ON
t DH _ DL
t DL _ DH
DH_ low to DL_ high
DL_ low to DH_ high
BST1 to V DD1 , BST2 to V DD2 ; measure with
10mA of current
15
9
25
20
10
40
35
20
ns
Ω
_______________________________________________________________________________________
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